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PD - 94174 IRF7757 HEXFET(R) Power MOSFET l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration VDSS 20V RDS(on) max (m) ) 35@VGS = 4.5V 40@VGS = 2.5V ID 4.8A 3.8A Description HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de- 1 2 3 4 1= 2= 3= 4= S1 G1 S2 G2 8= 7= 6= 5= D D D D 8 7 6 5 signer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 4.8 3.9 19 1.2 0.76 9.5 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 105 Units C/W www.irf.com 1 05/03/01 IRF7757 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 --- --- --- 0.60 11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.013 --- --- --- --- --- --- --- --- 15 2.5 4.8 9.5 9.2 36 14 1340 180 132 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 35 VGS = 4.5V, ID = 4.8A m 40 VGS = 2.5V, ID = 3.8A 1.2 V VDS = V GS, ID = 250A --- S VDS = 10V, ID = 4.8A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C 100 VGS = 12V nA -100 VGS = -12V 23 ID = 4.8A --- nC VDS = 16V --- VGS = 4.5V --- VDD = 10V --- ID = 1.0A ns --- RG = 6.2 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 20 10 1.2 A 19 1.2 30 15 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.2A, VGS = 0V TJ = 25C, I F = 1.2A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7757 1000 VGS 7.5V 5.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP 100 ID , Drain-to-Source Current (A) 100 10 ID , Drain-to-Source Current (A) VGS 7.5V 5.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP 10 1 1.5V 20s PULSE WIDTH Tj = 25C 1.5V 20s PULSE WIDTH Tj = 150C 0.1 1 10 100 0.1 0.1 1 10 100 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.00 2.0 ID = 4.8A R DS(on) , Drain-to-Source On Resistance (Normalized) ID , Drain-to-Source Current ( ) 1.5 10.00 T J = 150C 1.0 T J = 25C VDS = 15V 20s PULSE WIDTH 1.5 2.0 2.5 3.0 0.5 1.00 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7757 10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd 5 ID = 4.8A VDS = 16V VDS = 10V VGS, Gate-to-Source Voltage (V) 4 C, Capacitance(pF) Ciss 1000 3 2 Coss Crss 100 1 10 100 1 0 0 4 8 12 16 20 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100.00 100 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10.00 T J = 150C 10 100sec 1msec 1 10msec Tc = 25C Tj = 150C Single Pulse 0 1 10 100 1.00 T J = 25C VGS = 0V 0.10 0.1 0.5 0.9 1.2 1.6 2.0 VSD , Source-toDrain Voltage (V) 0.1 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7757 5.0 VDS 4.0 RD VGS RG I D , Drain Current (A) D.U.T. + 3.0 - VDD VGS 2.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJC ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.1 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 1 10 P DM t1 t2 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7757 RDS(on) , Drain-to -Source On Resistance ( ) R DS (on) , Drain-to-Source On Resistance ( ) 0.05 0.050 VGS = 2.5V 0.04 0.040 ID = 4.8A 0.03 VGS = 4.5V 0.030 0.02 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.020 0 5 10 15 20 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. QG 50K 12V .2F .3F VGS QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com IRF7757 1.3 120 110 VGS(th) Gate threshold Voltage (V) 1.1 100 90 80 Power (W) 75 100 125 150 0.9 70 60 50 40 30 ID = 250A 0.7 0.5 20 10 0.3 -75 -50 -25 0 25 50 0 1.00 10.00 100.00 1000.00 T J , Temperature ( C ) Time (sec) Fig 15. Typical Threshold Voltage Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7757 TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) PART NUMBER DAT E CODE (YW) XXYW 7702 T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF 24 25 26 X Y Z T ABLE 2 WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 52 X Y Z TSSOP-8 Tape and Reel 8LT SSOP (MO-153AA) 16 mm O 13" 16mm 8 mm FEED DIRECT ION NOT ES: 1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541. 8 www.irf.com IRF7757 TSSOP-8 Package Outline Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/01 www.irf.com 9 |
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